Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Antolin E ^a   Marti A ^a   Olea, J ^b   Pastor, D ^b   Gonzalez Diaz G ^b   Martil I ^b   Luque, A ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; SEMICONDUCTOR DOPING; SILICON WAFERS; TITANIUM; WAVE FUNCTIONS;

CARRIER LIFETIME MEASUREMENTS; CONCENTRATION RANGES; DELOCALIZATIONS; ELECTRON WAVE FUNCTIONS; FUNDAMENTAL STUDIES; INTERMEDIATE BAND MATERIALS; NON-RADIATIVE RECOMBINATIONS; TITANIUM DOPED;

CARRIER LIFETIME;

EID: 59349102126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077202     Document Type: Article

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