Transition-metal-substituted indium thiospinels as novel intermediate-band materials: Prediction and understanding of their electronic properties

Physical Review Letters

Volumn 101, Issue 4, 2008, Pages

  Palacios, P ^a,b   Aguilera, I ^a   Sanchez K ^a   Conesa, J C ^b   Wahnon P ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b INSTITUTO DE CATÁLISIS Y PETROLEOQUÍMICA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; LIGHT ABSORPTION; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTING INDIUM;

ABSORPTION CO-EFFICIENT; ELECTRONIC BAND STRUCTURE; NOVEL INTERMEDIATES; OCTAHEDRAL SITES; SEMICONDUCTOR BAND GAP; SOLAR SPECTRUM; THIRD GENERATION; VISIBLE RANGE;

TRANSITION METALS;

EID: 48249097199     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.046403     Document Type: Article

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