Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Kim, T G ^a   Warrender, Jeffrey M ^a,b   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

^b Benet Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; CRYSTAL QUALITY; ION CHANNELING; SULFUR-RELATED LOCALIZED STATES;

CRYSTALS; INFRARED RADIATION; RAPID SOLIDIFICATION; SULFUR; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT ABSORPTION;

EID: 33745183573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2212051     Document Type: Article

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