Potential of Mn doped In1-xGaxN for implementing intermediate band solar cells

Solar Energy Materials and Solar Cells

Volumn 93, Issue 5, 2009, Pages 641-644

  Marti A ^a   Tablero, C ^a   Antolin E ^a   Luque, A ^a   Campion, R P ^b   Novikov, S V ^b   Foxon, C T ^b  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

InGaN; Intermediate band; Manganese; Novel concepts

Indexed keywords

III-V SEMICONDUCTORS; SEMICONDUCTOR ALLOYS; SOLAR CELLS;

INGAN; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; LIGHT CONCENTRATION; LIMITING EFFICIENCIES; NON-RADIATIVE RECOMBINATIONS; NOVEL CONCEPT; RESULTING MATERIALS;

MANGANESE;

EID: 62549129442     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.12.031     Document Type: Article

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