Two-layer Hall effect model for intermediate band Ti-implanted silicon

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Olea, J ^a   Gonzalez Diaz G ^a   Pastor, D ^a   Martil I ^a   Marti A ^b   Antolin E ^b   Luque, A ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; EFFECT MODEL; ELECTRONIC TRANSPORT PROPERTIES; HALL EFFECT MEASUREMENT; IMPLANTED LAYERS; INTERMEDIATE BANDS; LOW MOBILITY; METALLIC BANDS; OPTIMUM LOCATION; TEMPERATURE DEPENDENT; TWO LAYER MODEL; TWO LAYERS;

ELECTRIC RESISTANCE; ELECTRON MOBILITY; GYRATORS; HALL EFFECT; SEMICONDUCTING SILICON; TRANSPORT PROPERTIES;

MAGNETIC FIELD EFFECTS;

EID: 79953664276     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561374     Document Type: Article

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