Electronic transport properties of Ti-impurity band in Si

Journal of Physics D: Applied Physics

Volumn 42, Issue 8, 2009, Pages

  Olea, J ^a   Gonzlez Diaz G ^a   Pastor, D ^a   Mrtil, I ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DENSITY; BAND DIAGRAMS; CONDUCTION MECHANISM; DENSITY OF HOLES; ELECTRONIC TRANSPORT PROPERTIES; ENERGETIC POSITION; HALL EFFECT MEASUREMENT; HIGH TEMPERATURE; HIGH-DOSE IMPLANTATION; IB THEORY; IMPLANTED LAYERS; IMPURITY BANDS; MOTT TRANSITIONS; PULSED LASER; TEMPERATURE DEPENDENT; VAN DER PAUW METHOD;

ELECTRON MOBILITY; HALL EFFECT; HOLE MOBILITY; MAGNETIC FIELD EFFECTS; PULSED LASER APPLICATIONS; SUBSTRATES; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON;

EID: 70350452611     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/8/085110     Document Type: Article

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