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Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

Sub-bandgap absorption in Ti implanted Si over the Mott limit

(5) Olea, J a Del Prado, A a Pastor, D a Martil I a Gonzalez Diaz G a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; DEEP LEVEL; ENERGY DENSITY; INTERMEDIATE BANDS; STRUCTURAL AND OPTICAL PROPERTIES; SUBBAND GAP ABSORPTION; THICK LAYERS;

ENERGY GAP; OPTICAL PROPERTIES;

ABSORPTION;

EID: 79959404626 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596525 Document Type: Article

Times cited : (53)

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