Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Microelectronic Engineering

Volumn 88, Issue 11, 2011, Pages 3227-3230

  Tang, Zhenjie ^a   Xu, Hanni ^a   Li, Haitao ^a   Chen, Yan ^a   Xia, Yidong ^a   Yin, Jiang ^a   Zhu, Xinhua ^a   Liu, Zhiguo ^a   Li, Aidong ^a   Yan, Feng ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Charge storage; Phase separation; ZrO2 nanocrystallites

Indexed keywords

BAKE TEMPERATURE; BLOCKING LAYERS; CHARGE STORAGE; CHARGE STORAGE CHARACTERISTIC; CHARGE TRAPPING MEMORIES; GATE VOLTAGES; LARGE HYSTERESIS; MEMORY WINDOW; NONVOLATILE SEMICONDUCTOR MEMORIES; SMALL CHARGES; STORAGE NODES;

CAPACITORS; NANOCRYSTALLITES; NONVOLATILE STORAGE; PHASE SEPARATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS; ZIRCONIUM ALLOYS;

CHARGE TRAPPING;

EID: 80053380976     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.06.025     Document Type: Article

References (29)

1. International Technology Roadmap for Semiconductors (ITRS), 2009, p. 9.
2. J.K. Bu, and M.H. White Solid-State electron. 45 2001 47
3. J.R. Hwang, T.L. Lee, H.C. Ma, T.C. Lee, T.H. Chung, C.Y. Chang, S.D. Liu, B.C. Perng, J.W. Hsu, M.Y. Lee, C.Y. Ting, C.C. Huang, J.H. Shieh, and F.L. Yang Tech. Dig. Int. Electron Devices Meet. 2005 161
4. S. Maikap, T.Y. Wang, P.J. Tzeng, C.H. Lin, T.C. Tien, L.S. Lee, J.R. Yang, and M.J. Tsai Appl. Phys. Lett. 90 2007 262901
5. Y.N. Tan, W.K. Chim, B.J. Cho, and W.K. Choi IEEE Trans. Electron Devices 51 2004 1143
6. J.H. Kim, and J.B. Choi IEEE Trans. Electron Devices. 51 2004 2048
7. Z.J. Tang, Y.D. Xia, H.N. Xu, J. Yin, Z.G. Liu, A.D. Li, X.J. Liu, F. Yan, and X.L. Ji Electrochem. Solid-State Lett. 14 2011 G13
8. X. Zhu, Y. Yang, Q. Li, D.E. Ioannou, J.S. Suehle, and C.A. Richter Microelectron. Eng. 85 12 2008 2403
9. T.M. Pan, T.Y. Yu, and C.C. Wang J. Electrochem. Soc. 155 2008 G218
10. Y. Zhou, J. Yin, H.N. Xu, Y.D. Xia, Z.G. Liu, A.D. Li, Y.P. Gong, L. Pu, F. Yan, and Y. Shi Appl. Phys. Lett. 97 2010 143504
11. M. Theodoropoulou, and A.G. Nassiopoulou Microelectron. Eng. 85 2008 2362
12. S.Y. Yang, Q. Wang, M.H. Zhang, S.B. Long, J. Liu, and M. Liu Nanotechnology 21 2010 245201
13. E. Kim, K. Kim, D. Son, J. Kim, K. Lee, M. Han, S. Won, J. Sok, W.S. Hong, and K. Park Microelectron. Eng. 85 2008 2366
14. C.C. Lin, T.C. Chang, C.H. Tu, W.R. Chen, L.W. Feng, S.M. Sze, T.Y. Tseng, S.C. Chen, and J.Y. Lin J. Electrochem. Soc. 156 2009 H276
15. M.L. Ostraat, J.W. De Blauwe, M.L. Green, L.D. Bell, M.L. Brongersma, J. Casperson, R.C. Flagan, and H.A. Atwater Appl. Phys. Lett. 79 2001 433
16. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
17. C.S. Lai, K.M. Fan, H.K. Peng, S.J. Lin, C.Y. Lee, and C.F. Ai Appl. Phys. Lett. 90 2007 172904
18. M.J. Guittet, J.P. Crocombette, and M. Gautier-Soyer Phys. Rev. B 63 2001 125117
19. K.I. Seo, P.C. McLntyre, H. Kim, and K.C. Saraswat Appl. Phys. Lett. 86 2005 082904
20. G.B. Rayner Jr., D. Kang, Y. Zhang, and G. Lucovsky J. Vac. Sci. Technol. B 20 2002 1748
21. Y.H. Lin, C.H. Chien, C.T. Lin, C.Y. Chang, and T.F. Lei IEEE Trans. Electron Devices 53 2006 782
22. S. Maikap, T.Y. Wang, J.R. Yang, and M.J. Tsai Appl. Phys. Lett. 90 2007 253108
23. P. Chakraborty, S.S. Mahato, T.K. Maiti, M.K. Bera, C. Mahata, S.K. Samanta, A. Biswas, and C.K. Maiti Microelectron. Eng. 86 2009 299
24. S. Haddad, C. Chang, B. Swaminathan, and J. Lien IEEE Electron Device Lett. 10 1989 117
25. S. Yamada, Y. Hiura, T. Yamane, K. Amemiya, Y. Oshima, and K. Yoshikawa IEDM Tech. Dig. 1993 23
26. A. Roy, and M.H. White Solid-State Electron. 34 1991 083
27. Y. Hu, and M.H. White Solid-State Electron. 36 1993 401
28. S.J. Wrazien, Y. Zhao, J.D. Krayer, and M.H. White Solid-State Electron. 47 2003 885
29. Y. Yang, and M.H. White Solid-State Electron. 44 2000 949