High- k Nd2O3 and NdTiO3 charge trapping layers for nonvolatile memory metal-SiO2-high-k-SiO 2-silicon devices

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  Pan, Tung Ming ^a,b   Yu, Te Yi ^a   Wang, Ching Chi ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHARGE TRAPPING; CRYSTAL ATOMIC STRUCTURE; DATA STORAGE EQUIPMENT; FILM GROWTH; GRAIN GROWTH; HYSTERESIS; IMAGING TECHNIQUES; INTERFACIAL ENERGY; MAGNETIC MATERIALS; MAGNETISM; METALS; MICROSCOPIC EXAMINATION; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NEODYMIUM; NONMETALS; OXIDE FILMS; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; SCANNING PROBE MICROSCOPY; SILICATES; SILICON;

CAPACITANCE-VOLTAGE HYSTERESIS; CHARGE TRAPPING LAYERS; CHARGE-LOSS; FLATBAND VOLTAGE SHIFTING; METAL OXIDES; MORPHOLOGICAL FEATURES; NON VOLATILE MEMORY DEVICES; OXIDE INTERFACES; ROOM TEMPERATURES; TI CONTENT; TRAP ENERGY; X-RAY DIFFRACTION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 51849124631     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2967718     Document Type: Article

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