Charge trapping memory characteristics of p-Si/Ultrathin Al2 O3/(HfO2)0.8(Al2 O3) 0.2/Al2O3/metal multilayer structure

Electrochemical and Solid-State Letters

Volumn 14, Issue 2, 2011, Pages

  Tang, Zhenjie ^a   Xia, Yidong ^a   Xu, Hanni ^a   Yin, Jiang ^a   Liu, Zhiguo ^a   Li, Aidong ^a   Liu, Xiaojie ^a   Yan, Feng ^a   Ji, Xiaoli ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; CHARGE TRAP; CHARGE TRAPPING MEMORIES; HIGH-K DIELECTRIC FILMS; MEMORY PROPERTIES; MEMORY WINDOW; METAL CAPACITORS; METAL MULTILAYERS; ULTRA-THIN;

ALUMINUM; ATOMIC LAYER DEPOSITION; CAPACITORS; DIELECTRIC FILMS; HAFNIUM; HAFNIUM COMPOUNDS;

CHARGE TRAPPING;

EID: 78951494731     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3518706     Document Type: Article

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