SCOPUS 정보 검색 플랫폼

Volumn 85, Issue 12, 2008, Pages 2366-2369

Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes

(10) Kim, Eunkyeom a Kim, Kyoungmin a Son, Daeho a Kim, Jeongho a Lee, Kyungsu a Han, Moonsup a Won, Sunghwan a Sok, Junghyun a Hong, Wan Shick a Park, Kyoungwan a

a University of Seoul (South Korea)

Author keywords

Flash memory; Metallic nanodots floating gate memory; Ni nanodots; NiSi nanodots; Nonvolatile memory

Indexed keywords

FLASH MEMORY; GATES (TRANSISTOR); MOS DEVICES; MOSFET DEVICES; NICKEL ALLOYS; NONVOLATILE STORAGE; THRESHOLD VOLTAGE;

CHARGE AND DISCHARGES; GATE BIAS VOLTAGES; GATE OXIDES; METALLIC NANODOTS FLOATING-GATE MEMORY; MOS FETS; NANO DOTS; NI NANODOTS; NISI NANODOTS; NON VOLATILES; NONVOLATILE MEMORIES; NONVOLATILE MEMORY; RETENTION TIMES; STORAGE NODES; VOLTAGE SHIFTS;

DATA STORAGE EQUIPMENT;

EID: 56649088150 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2008.09.037 Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.