SCOPUS 정보 검색 플랫폼

Volumn 156, Issue 4, 2009, Pages

Improvement of charge-storage characteristics of Mo nanocrystal memory by double-layer structure

(9) Lin, Chao Cheng a Chang, Ting Chang b Tu, Chun Hao a Chen, Wei Ren a Feng, Li Wen a Sze, Simon M a Tseng, Tseung Yuen a Chen, Sheng Chi c Lin, Jian Yang c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLYBDENUM; NANOCRYSTALS; OXYGEN; PHOTOIONIZATION; PHOTONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; REDOX REACTIONS; SEMICONDUCTOR STORAGE; SILICIDES; SOLIDS; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS; TRANSMISSION ELECTRON MICROSCOPY; WINDOWS;

CRITICAL TEMPERATURES; DOUBLE LAYERS; DOUBLE-LAYER STRUCTURES; ELECTRICAL MEASUREMENTS; ENERGY-BAND DIAGRAMS; MEMORY WINDOWS; NANOCRYSTAL MEMORIES; NANOCRYSTAL STRUCTURES; RETENTION CHARACTERISTICS; SILICIDE LAYERS; SPECTRAL ANALYSIS; STORAGE CHARACTERISTICS; X-RAY PHOTOELECTRON SPECTROSCOPIES; X-RAY PHOTOELECTRONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 61349148827 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3079358 Document Type: Article

Times cited : (3)

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