SCOPUS 정보 검색 플랫폼

Volumn 86, Issue 7-9, 2009, Pages 1933-1935

The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

(10) Lee, Joonmyoung a Choi, Hyejung a Seong, Dong jun a Yoon, Jaesik a Park, Jubong a Jung, Seungjae a Lee, Wootae a Chang, Man a Cho, Chunhum a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

Impedance spectroscopy; LCMO; ReRAM

Indexed keywords

IMPEDANCE SPECTROSCOPY; INTERFACIAL LAYER; LCMO; MASS PRODUCTION; NANO SCALE; OXYGEN DEFICIENT; PULSE SWITCHING; RERAM; RESISTIVE SWITCHING; RETENTION PROPERTIES; SWITCHING PROPERTIES; YIELD PROPERTIES;

ALUMINUM; LANTHANUM; MANGANESE; MANGANESE COMPOUNDS; OXYGEN; OXYGEN VACANCIES; SPECTROSCOPIC ANALYSIS; SWITCHING SYSTEMS;

SWITCHING;

EID: 67349256845 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2009.03.017 Document Type: Article

Times cited : (11)

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