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Volumn 519, Issue 1, 2010, Pages 499-504

Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition

Author keywords

Bismuth ferrite; Chemical deposition; Ferroelectric properties; Unipolar resistive switching; X ray diffraction

Indexed keywords

BFO FILMS; BISMUTH FERRITES; CARRIER INJECTION; CHEMICAL DEPOSITION; CHEMICAL SOLUTION DEPOSITION; CHEMICAL SOLUTION DEPOSITION METHOD; CONDUCTING PATHS; CONDUCTION MECHANISM; ELECTRONIC CARRIERS; FERROELECTRIC PROPERTIES; HIGH-RESISTANCE STATE; INITIAL STATE; LOW-RESISTANCE STATE; OHMIC CONDUCTION; POOLE-FRENKEL EMISSION; POOLE-FRENKEL MODEL; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SI SUBSTRATES; SPACE CHARGE LIMITED CONDUCTION;

EID: 77957693621     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.08.004     Document Type: Article
Times cited : (69)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.