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Volumn 519, Issue 1, 2010, Pages 499-504
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Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition
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Author keywords
Bismuth ferrite; Chemical deposition; Ferroelectric properties; Unipolar resistive switching; X ray diffraction
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Indexed keywords
BFO FILMS;
BISMUTH FERRITES;
CARRIER INJECTION;
CHEMICAL DEPOSITION;
CHEMICAL SOLUTION DEPOSITION;
CHEMICAL SOLUTION DEPOSITION METHOD;
CONDUCTING PATHS;
CONDUCTION MECHANISM;
ELECTRONIC CARRIERS;
FERROELECTRIC PROPERTIES;
HIGH-RESISTANCE STATE;
INITIAL STATE;
LOW-RESISTANCE STATE;
OHMIC CONDUCTION;
POOLE-FRENKEL EMISSION;
POOLE-FRENKEL MODEL;
RESISTANCE RATIO;
RESISTANCE SWITCHING;
RESISTIVE SWITCHING;
RESISTIVE SWITCHING BEHAVIORS;
SI SUBSTRATES;
SPACE CHARGE LIMITED CONDUCTION;
BISMUTH;
CHEMICALS;
DEPOSITION;
DIFFRACTION;
FERRITE;
FERROELECTRIC FILMS;
FERROELECTRICITY;
OXYGEN;
OXYGEN VACANCIES;
SWITCHING;
SWITCHING SYSTEMS;
THIN FILMS;
X RAY DIFFRACTION;
CHEMICAL RESISTANCE;
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EID: 77957693621
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.08.004 Document Type: Article |
Times cited : (69)
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References (25)
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