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Applied Physics Letters

Volumn 96, Issue 7, 2010, Pages

Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

(7) Shang, D S a Shi, L a Sun, J R a Shen, B G a Zhuge, F b Li, R W b Zhao, Y G c

a INSTITUTE OF PHYSICS (China)

b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

c TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; ELECTRIC-FIELD-INDUCED RESISTANCE; IN-SITU; INTERFACIAL BARRIERS; LOW-TO-HIGH; OXYGEN ANNEALING; OXYGEN ATMOSPHERE; POLYCRYSTALLINE; RESISTANCE SWITCHING; SURFACE DENSITY; SURFACE MODIFICATION; SURFACE STATE; SWITCHING BEHAVIORS; TRAPPING/DETRAPPING; TUNGSTEN OXIDE FILMS; X RAY PHOTOEMISSION SPECTROSCOPY;

EMISSION SPECTROSCOPY; OXIDE FILMS; OXIDES; OXYGEN; SWITCHING; TUNGSTEN; TUNGSTEN COMPOUNDS;

SURFACE RESISTANCE;

EID: 77249144043 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3300637 Document Type: Article

Times cited : (84)

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