SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 518, Issue 20, 2010, Pages 5652-5655

Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application

(7) Zhou, P a Shen, H b Li, J a Chen, L Y a Gao, C a Lin, Y a Tang, T A a

a FUDAN UNIVERSITY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

Non volatile memory; Resistive switching; Stoichiometric zirconium

Indexed keywords

COMBINED MODEL; ELECTRODE SIZE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; RESISTANCE SWITCHING; RESISTIVE SWITCHING; THICKNESS DEPENDENCE;

SWITCHING; SWITCHING SYSTEMS; ZIRCONIUM; ZIRCONIUM ALLOYS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77955347402 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.10.034 Document Type: Conference Paper

Times cited : (15)

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