Analysis of grain-boundary effects on the electrical properties of Pb(Zr,Ti)O3 thin films

Applied Physics Letters

Volumn 81, Issue 14, 2002, Pages 2602-2604

  Lee, Jang Sik ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; ELECTRICAL PERFORMANCE; FATIGUE CHARACTERISTICS; GRAIN BOUNDARY EFFECTS; LINE BOUNDARIES; PB(ZR , TI)O; PZT; PZT THIN FILM;

DEGRADATION; FERROELECTRIC FILMS; GRAIN BOUNDARIES; LEAD; THIN FILMS; ZIRCONIUM;

ELECTRIC PROPERTIES;

EID: 79956055439     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511280     Document Type: Article

References (13)

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13. It is very important to address the microstructure of the SNLC PZT thin films in this work. We confirmed that the laterally crystallized region is (111)-oriented single crystal by high-resolution transmission electron microscopy. The micrograph shows almost clean matrix except small lamellae-type defects. To verify the kinds of line defects, selected area electron diffraction (SAED) analysis was carried out. The corresponding electron diffraction pattern represents a perovskite single-crystalline pattern viewing along the 〈111〉 direction. Macroscopic rhombohedral symmetry can be preserved by averaging in over many small ordered regions with 〈110〉 structural modulations. Twin spots were observed along the plane of 101. From the result, the lamellae-type defects were found to be twin boundaries. The reason for the twin formation during the SNLC was considered to reduce the strain energy for large grain size. The laterally grown length was over 10 μm, so there was gradual accumulation of strain energy according to the size of crystallized region. The growth mechanism of the SNLC PZT with an emphasis on the microstructure will be published elsewhere.