Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells

Semiconductor Science and Technology

Volumn 26, Issue 10, 2011, Pages

  Netzel, C ^a   Mauder, C ^b   Wernicke, T ^c   Reuters, B ^b   Kalisch, H ^b   Heuken, M ^b,d   Vescan, A ^b   Weyers, M ^a   Kneissl, M ^a,c  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; CARRIER LOCALIZATION; DENSITY-DEPENDENT; EXCITATION POWER; HIGH DENSITY; INDIUM CONCENTRATION; INHOMOGENEITIES; INTERNAL QUANTUM EFFICIENCY; LOW TEMPERATURES; M-PLANE; MOLE FRACTION; MULTIPLE CHARACTERISTICS; NON-POLAR; NON-RADIATIVE RECOMBINATIONS; NONPOLAR QUANTUM WELLS; POLAR SURFACES; POLARIZATION FIELD; QUANTUM WELL; QUANTUM WELL STRUCTURES; RADIATIVE RECOMBINATION RATE; THERMALLY ACTIVATED; THREADING DISLOCATION;

CHARGE CARRIERS; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ENERGY GAP; EPITAXIAL GROWTH; INDIUM; LIGHT EMITTING DIODES; NITRIDES; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; STACKING FAULTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80053354253     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/10/105017     Document Type: Article

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