Towards understanding the emission efficiency of nitride quantum wells

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2808-2813

  Hangleiter, A ^a   Fuhrmann, D ^a   Grewe, M ^a   Hitzel, F ^a   Klewer, G ^a   Lahmann, S ^a   Netzel, C ^a   Riedel, N ^a   Rossow, U ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; EXCITONS; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDES; QUANTUM EFFICIENCY; RADIATION; SUBSTRATES; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXIAL GROWTH; NONRADIATIVE RECOMBINATION PROCESSES; WAVELENGTHS; EMISSION EFFICIENCY; SAPPHIRE SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS; NITRIDES;

EID: 6344293749     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405051     Document Type: Conference Paper

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