Photoluminescence and structural analysis of a-plane InGaN layers

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4992-4995

  Aschenbrenner, T ^a   Figge, S ^a   Schowalter, M ^a   Rosenauer, A ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

A1. X ray diffraction; A3. Metalorganic vapour phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL GROWTH; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LIGHT EMISSION; LUMINESCENCE; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL ANALYSIS; VAPOR PHASE EPITAXY; WELLS;

A1. X-RAY DIFFRACTION; A3. METALORGANIC VAPOUR PHASE EPITAXY; A3. QUANTUM WELLS; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTOR GROWTH;

EID: 56249126744     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.014     Document Type: Article

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