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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 449-454

AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire

(7) Florescu, D I a Ramer, J C a Merai, V N a Parekh, A a Lu, D a Lee, D S a Armour, E A a

a Veeco Compound Semiconductor Inc (United States)

Author keywords

A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

PHOTOLUMINESCENCE EMISSION; QUANTUM HETEROSTRUCTURES; THREADING DISLOCATIONS; TRIMETHYLINDIUM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944249965 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.076 Document Type: Conference Paper

Times cited : (11)

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