Investigation of the unusual temperature dependence of InGaN/GaN quantum well photoluminescence over a range of emission energies

Journal of Physics D: Applied Physics

Volumn 37, Issue 21, 2004, Pages 2954-2961

  Pecharroman Gallego R ^a   Martin, R W ^a   Watson, I M ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTIONS; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SAMPLING; SEMICONDUCTOR QUANTUM WELLS;

EMISSION ENERGIES; FITTING PARAMETERS; LINEWIDTH DEPENDENCE; TEMPERATURE DEPENDENCE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 9144261838     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/21/003     Document Type: Review

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