Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 246-249

  Mauder, C ^a   Reuters, B ^a   Wang, K R ^b   Fahle, D ^a   Trampert, A ^b   Rzheutskii, M V ^c   Lutsenko, E V ^c   Yablonskii, G P ^c   Woitok, J F ^d   Chou, M M C ^e   Heuken, M ^a,f   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^d MALVERN INSTRUMENTS LTD   (United Kingdom)

^e NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^f AIXTRON AG   (Germany)

Author keywords

A1. Line defects; A1. Segregation; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting IIIV materials

Indexed keywords

A1. SEGREGATION; A1. X-RAY DIFFRACTION; A3. QUANTUM WELLS; A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; LINE DEFECTS; SEMI CONDUCTING III-V MATERIALS;

DEFECTS; DIFFRACTION; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79551685148     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.031     Document Type: Article

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