메뉴 건너뛰기




Volumn 91, Issue 3, 2002, Pages 1104-1107

Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; CATHODOLUMINESCENCE IMAGES; EMISSION PEAKS; EMISSION PROPERTIES; INGAN/GAN; INTEGRATED INTENSITIES; INTENSITY FLUCTUATIONS; LOCALIZED STATE; PHOTOLUMINESCENCE INTENSITIES; RED SHIFT; TEMPERATURE INDEPENDENCE;

EID: 0036470699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1427143     Document Type: Article
Times cited : (29)

References (16)
  • 11
    • 0000763922 scopus 로고    scopus 로고
    • jcr JCRGAE 0022-0248
    • R. Westphäling, J. Cryst. Growth 184/185, 1072 (1998). jcr JCRGAE 0022-0248
    • (1998) J. Cryst. Growth , vol.184-185 , pp. 1072
    • Westphäling, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.