Photoconduction mechanism of oxygen sensitization in InN nanowires

Nanotechnology

Volumn 22, Issue 42, 2011, Pages

  Chen, R S ^a   Yang, T H ^b   Chen, H Y ^c   Chen, L C ^c   Chen, K H ^c,d   Yang, Y J ^c   Su, C H ^b   Lin, C R ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; ADSORBED OXYGEN; CARRIER RECOMBINATION; ELECTRON TRAPPING; HIGH GAIN; IN-VACUUM; INDIUM NITRIDE; INN NANOWIRES; LONG LIFETIME; NANOMATERIAL; NATIVE OXIDES; OXYGEN SENSITIZATION; PHOTOCONDUCTION; PHOTOCURRENT GENERATIONS; POWER DEPENDENCE; SURFACE STATE; THERMAL CARRIERS;

ACTIVATION ENERGY; NANOWIRES; NITRIDES;

OXYGEN;

EID: 80053244417     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/42/425702     Document Type: Article

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