Reduced surface electron accumulation at InN films by ozone induced oxidation

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Cimalla, V ^a   Lebedev, V ^a   Wang, Ch Y ^a   Ali, M ^a   Ecke, G ^a   Polyakov, V M ^a   Schwierz, F ^a   Ambacher, O ^a   Lu, H ^b   Schaff, W J ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC TRANSPORT PROPERTIES; ROOM TEMPERATURE; SHEET CARRIER DENSITY; SURFACE ELECTRONS;

CONCENTRATION (PROCESS); OXIDATION; OZONE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE DEFECTS; THIN FILMS; TRANSPORT PROPERTIES;

ELECTRON BEAMS;

EID: 34247235176     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721365     Document Type: Article

References (20)

1. V. M. Polyakov and F. Schwierz, Appl. Phys. Lett. 88, 032101 (2006).
2. H. Lu, W. J. Schaff, L. F. Eastman, J. Wu, W. Walukiewicz, D. C. Look, and R. J. Molnar, Mater. Res. Soc. Symp. Proc. 743, L4.10 (2003).
3. E. Dimakis, E. Illiopoulos, K. Tsagaraki, Th. Kehagias, Ph. Kominou, and A. Georgakilas, J. Appl. Phys. 97, 113520 (2005).
4. A. Yamamoto, T. Tanaka, K. Koide, and A. Hashimoto, Phys. Status Solidi B 194, 510 (2002).
5. V. Cimalla, V. Lebedev, F. M. Morales, R. Goldhahn, and O. Ambacher, Appl. Phys. Lett. 89, 172109 (2006).
6. L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 88, 252109 (2006).
7. I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff. J. Furthmüller, and F. Bechstedt. Phys. Rev. B 69, 201307 (2004).
8. D. Segev and C. G. Van de Walle, Europhys. Lett. 76, 305 (2006).
9. V. Cimalla, G. Ecke, M. Niebelschütz, O. Ambacher, R. Goldhahn, H. Lu, and W. J. Schaff, Phys. Status Solidi C 2, 2254 (2005).
10. V. Cimalla, M. Niebelschütz, G. Ecke, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischok, J. A. Schaefer, H. Lu, and W. J. Schaff, Phys. Status Solidi A 203, 59 (2006).
11. I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004).
12. H. Lu, W. J. Schaff, and L. F. Eastman, Mater. Res. Soc. Symp. Proc. 693, I1.5 (2002).
13. A. Georgakilas, presented on the Focused Session on InN and In-rich InGaN at the International Workshop on Nitride Semiconductors, Kyoto, Japan, 2006 (unpublished).
14. T. Maruyama, K. Yorozu, T. Noguchi, Y. Seki, Y. Saito, T. Araki, and Y. Nanishi, Phys. Status Solidi C 0, 2031 (2003).
15. T.-B. Hur, I. J. Lee, H. L. Park, Y.-H. Hwang, and H.-K. Kim, Solid State Commun. 130, 397 (2004).
16. V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, and D. Gonzalez, J. Appl. Phys. 100, 094902 (2006).
17. V. Lebedev, V. Cimalla, T. Baumann, O. Ambacher, F. M. Morales, J. G. Lozano, and D. González, J. Appl. Phys. 100, 094903 (2006).
18. V. Cimalla, Ch. Förster, G. Kittler, I. Cimalla, R. Kosiba, G. Ecke, O. Ambacher, R. Goldhahn, S. Shokhovets, A. Georgakilas, H. Lu, and W. J. Schaff. Phys. Status Solidi C 0, 2818 (2003).
19. H. Lu, W. J. Schaff, and L. F. Eastman. J. Appl. Phys. 96, 3577 (2004).
20. C. H. Swartz, R. P. Tompkins, N. C. Giles, T. H. Myers, H. Lu, W. J. Schaff, and L. F. Eastman, J. Cryst. Growth 269, 29 (2004).