Ultra wide band frequency characterization of integrated TiTaO-based metal-insulator-metal devices

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Bertaud, Thomas ^a,b,d   Bermond, Cédric ^a   Challali, Fatiha ^c   Goullet, Antoine ^c   Vallée, Christophe ^b   Fléchet, Bernard ^a  

^a UNIVERSITÉ DE SAVOIE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITÉ DE NANTES   (France)

^d IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; GRAIN BOUNDARIES; METAL INSULATOR BOUNDARIES; METALS; OXYGEN VACANCIES; PERMITTIVITY; SEMICONDUCTOR INSULATOR BOUNDARIES; TANTALUM OXIDES; TEMPERATURE MEASUREMENT; THICK FILMS; TITANIUM OXIDES;

CONDUCTION MECHANISM; DIELECTRIC PERMITTIVITIES; EXTRACTION PROCEDURE; MAXWELL-WAGNER RELAXATION; METAL INSULATOR METALS; RELATIVE PERMITTIVITY; WIDE BAND FREQUENCIES; WIDE FREQUENCY BANDS;

MIM DEVICES;

EID: 80052423679     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626067     Document Type: Article

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