High performance metal-insulator-metal capacitor using a SrTiO3/ ZrO2 bilayer

Applied Physics Letters

Volumn 94, Issue 25, 2009, Pages

  Jorel, C ^a   Valle C ^a   Gonon, P ^a   Gourvest, E ^a   Dubarry, C ^b   Defay, E ^c  

^a Laboratoire Interdisciplinaire de Physique   (France)

^b CEA GRENOBLE   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; BI-LAYER; CAPACITANCE DENSITY; HIGH-CAPACITANCE DENSITY; HIGH-K MATERIALS; METAL-INSULATOR-METAL CAPACITORS; NON-LINEARITY; SRTIO; VOLTAGE COEFFICIENT; VOLTAGE COEFFICIENT OF CAPACITANCES; VOLTAGE NONLINEARITIES;

CAPACITORS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; STRONTIUM ALLOYS; ZIRCONIUM ALLOYS;

CAPACITANCE;

EID: 67649511727     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3158951     Document Type: Article

References (17)

1. S. J. Kim, B. J. Cho, M. -F. Li, S. -J. Ding, C. Zhu, M. B. Yu, B. Narayanan, A. Chin, and D. -L. Kwong, IEEE Electron Device Lett. 0741-3106 25, 538 (2004). 10.1109/LED.2004.832785
2. V. Mikhelashvili, P. Thangadurai, W. D. Kaplan, and G. Eisenstein, Appl. Phys. Lett. 0003-6951 92, 132902 (2008). 10.1063/1.2905273
3. S. -J. Ding, H. Hu, C. Zhu, S. J. Kim, X. Yu, M. -F. Li, B. J. Cho, D. S. H. Chan, M. B. Yu, S. C. Rustagi, A. Chin, and D. -L. Kwong, IEEE Trans. Electron Devices 0018-9383 51, 886 (2004). 10.1109/TED.2004.827367
4. M. Kahn, C. Valĺe, E. Defay, C. Dubourdieu, M. Bonvalot, S. Blonkowski, J. R. Plaussu, P. Garrec, and T. Baron, Microelectron. Reliab. 0026-2714 47, 773 (2007). 10.1016/j.microrel.2007.01.029
5. E. Deloffre, L. Mont̀s, G. Ghibaudo, S. Bruỳre, S. Blonkowski, S. B́cu, M. Gros-Jean, and S. Cŕmer, Microelectron. Reliab. 0026-2714 45, 925 (2005). 10.1016/j.microrel.2004.11.024
6. S. J. Kim, B. J. Cho, M. F. Li, X. Yu, C. Zhu, A. Chin, and D. -L. Kwong, IEEE Electron Device Lett. 0741-3106 24, 387 (2003). 10.1109/LED.2003.813381
7. L. Goux, H. Vander Meeren, and D. J. Wouters, J. Electrochem. Soc. 0013-4651 153, F132 (2006). 10.1149/1.2198008
8. M. Lukosius, C. Wenger, S. Pasko, L. Costina, J. Dabrowski, R. Sorge, H. J. Mussig, and C. Lohe, IEEE Trans. Electron Devices 0018-9383 55, 2273 (2008). 10.1109/TED.2008.925286
9. Y. H. Jeong, J. H. Paik, Y. J. Lee, and S. Nabm, J. Electrochem. Soc. 0013-4651 155, G214 (2008). 10.1149/1.2966215
10. S. Blonkowski, Appl. Phys. Lett. 0003-6951 91, 172903 (2007). 10.1063/1.2800291
11. C. Durand, C. Valĺe, C. Dubourdieu, M. Kahn, M. Derivaz, S. Blonkowski, D. Jalabert, P. Hollinger, Q. Fang, and I. W. Boyd, J. Vac. Sci. Technol. A 0734-2101 24, 459 (2006). 10.1116/1.2190649
12. The International Technology Roadmap for Semiconductors (ITRS) (Semiconductor Industry Association, 2008), Table RFAMS3 On-Chip Passives Technology Requirements, http://www.itrs.net/Links/2008ITRS/Home2008.htm.
13. E. Defa, B. Andre, F. Baume, G. Tartavel, D. Muyard, and L. Ulmer, Ferroelectrics 0015-0193 288, 121 (2003). 10.1080/00150190390211945
14. See, for instance, C. Ang and Z. Yu, Phys. Rev. B 0163-1829 69, 174109 (2004), and references therein. 10.1103/PhysRevB.69.174109
15. F. El Kamel, P. Gonon, and C. Valĺe, Appl. Phys. Lett. 0003-6951 91, 172909 (2007). 10.1063/1.2803221
16. P. Gonon and C. Valĺe, Appl. Phys. Lett. 0003-6951 90, 142906 (2007). 10.1063/1.2719618
17. D. Dornisch, G. Wilk, G. Li, K. M. Ring, D. J. Howard, and M. Racanelli, ECS Trans. 1938-5862 6, 755 (2007). 10.1149/1.2728832