High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 504-506

  Chiang, K C ^a   Huang, C C ^a   Chin, Albert ^a,b   Chen, W J ^c   McAlister, S P ^d   Chiu, H F ^e   Chen, Jiann Ruey ^e   Chi, C C ^e  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Analog; Ir; ITRS; MIM; TiTaO

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; INTEGRATED CIRCUITS; IRIDIUM; LEAKAGE CURRENTS; MIM DEVICES; PERMITTIVITY; TANTALUM COMPOUNDS; TITANIUM COMPOUNDS;

ANALOG CAPACITORS; ANALOG INTEGRATED CIRCUITS; HIGH-CAPACITANCE DENSITY; MIM CAPACITORS; TANTALUM NITRIDE;

CAPACITORS;

EID: 22944458513     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851241     Document Type: Article

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