Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 599-602

  Liu, C H ^a   Chen, H W ^a  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWNS; E-MODEL; ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; FIELD ACCELERATION; GATE LEAKAGE CURRENT DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PERCOLATION MODELS; RELIABILITY PROPERTIES; STRESS CONDITION; TDDB LIFETIME; TIME DEPENDENCE; WEIBULL SLOPE;

ACTIVATION ENERGY; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; SOLVENTS;

GATE DIELECTRICS;

EID: 77953131012     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.014     Document Type: Article

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