-
2
-
-
0035714050
-
6 thin films deposited by plasma-enhanced atomic layer deposition
-
6 thin films deposited by plasma-enhanced atomic layer deposition," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes vol. 40, no. 12, pp. 6941-6944, 2001.
-
(2001)
Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes
, vol.40
, Issue.12
, pp. 6941-6944
-
-
Lee, W.-J.1
You, I.-K.2
Ryu, S.-O.3
Yu, B.-G.4
Cho, K.-I.5
Yoon, S.-G.6
Lee, C.-S.7
-
3
-
-
17744399361
-
The relationship between photocatalytic activity and crystal structure in strontium tantalates
-
May
-
K. Yoshioka, V. Petrykin, M. Kakihana, H. Kato, and A. Kudo, "The relationship between photocatalytic activity and crystal structure in strontium tantalates," J. Catal., vol. 232, no. 1, pp. 102-107, May 2005.
-
(2005)
J. Catal
, vol.232
, Issue.1
, pp. 102-107
-
-
Yoshioka, K.1
Petrykin, V.2
Kakihana, M.3
Kato, H.4
Kudo, A.5
-
4
-
-
0035308537
-
15 microwave ceramics
-
Apr
-
15 microwave ceramics," J. Appl. Phys., vol. 89, no. 7, pp. 3900-3906, Apr. 2001.
-
(2001)
J. Appl. Phys
, vol.89
, Issue.7
, pp. 3900-3906
-
-
Kamba, S.1
Petzelt, J.2
Buixaderas, E.3
Haubrich, D.4
Vanek, P.5
Kuzel, P.6
Jawahar, I.N.7
Sebastian, M.T.8
Mohanan, P.9
-
5
-
-
17444426666
-
6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates
-
Mar
-
6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates," J. Appl. Phys., vol. 97, no. 7, p. 073 521, Mar. 2005.
-
(2005)
J. Appl. Phys
, vol.97
, Issue.7
, pp. 073-521
-
-
Regnery, S.1
Thomas, R.2
Ehrhart, P.3
Waser, R.4
-
6
-
-
33846097718
-
Investigation of strontium tantalate thin films for high-k gate dielectric applications
-
Dec
-
M. Silinskas, M. Lisker, B. Kalkofen, and E. P. Burte, "Investigation of strontium tantalate thin films for high-k gate dielectric applications," Mater Sci. Semicond. Process., vol. 9, no. 6, pp. 1102-1107, Dec. 2006.
-
(2006)
Mater Sci. Semicond. Process
, vol.9
, Issue.6
, pp. 1102-1107
-
-
Silinskas, M.1
Lisker, M.2
Kalkofen, B.3
Burte, E.P.4
-
7
-
-
2942618410
-
2 as precursor
-
2 as precursor," J. Electrochem. Soc., vol. 151, no. 5, pp. C292-C296, 2004.
-
(2004)
J. Electrochem. Soc
, vol.151
, Issue.5
-
-
Shin, W.-C.1
Ryu, S.-O.2
You, I.-K.3
Yu, B.-G.4
Lee, W.-J.5
Choi, K.-J.6
Yoon, S.-G.7
-
8
-
-
11144357153
-
Atomic layer deposition of strontium tantalate thin films from bimetallic precursors and water
-
M. Vehkamäki, M. Ritala, M. Leskelä, A. C. Jones, H. O. Davies, T. Sajavaara, and E. Rauhala, "Atomic layer deposition of strontium tantalate thin films from bimetallic precursors and water," J. Electrochem. Soc., vol. 151, no. 4, pp. F69-F72, 2004.
-
(2004)
J. Electrochem. Soc
, vol.151
, Issue.4
-
-
Vehkamäki, M.1
Ritala, M.2
Leskelä, M.3
Jones, A.C.4
Davies, H.O.5
Sajavaara, T.6
Rauhala, E.7
-
9
-
-
15344345163
-
Electrical properties of dielectric and ferroelectric films prepared by plasma enhanced atomic layer deposition
-
Jan
-
W.-J. Lee, W.-C. Shin, B.-G. Chae, S.-O. Ryu, I.-K. You, S.-M. Cho, B.-G. Yu, and B.-C. Shin, "Electrical properties of dielectric and ferroelectric films prepared by plasma enhanced atomic layer deposition," Integr. Ferroelectr., vol. 46, no. 1, pp. 275-284, Jan. 2002.
-
(2002)
Integr. Ferroelectr
, vol.46
, Issue.1
, pp. 275-284
-
-
Lee, W.-J.1
Shin, W.-C.2
Chae, B.-G.3
Ryu, S.-O.4
You, I.-K.5
Cho, S.-M.6
Yu, B.-G.7
Shin, B.-C.8
-
10
-
-
0032607672
-
6/SiON/Si structures
-
Jul
-
6/SiON/Si structures," Appl. Phys. Lett., vol. 75, no. 4, pp. 575-577, Jul. 1999.
-
(1999)
Appl. Phys. Lett
, vol.75
, Issue.4
, pp. 575-577
-
-
Tokumitsu, E.1
Fujii, G.2
Ishiwara, H.3
-
11
-
-
0033339394
-
A new metastable thin-film strontium tantalate perovskite
-
Aug
-
M. A. Rodriguez, T. J. Boyle, B. A. Hernandez, D. R. Taland, and K. Vanheusden, "A new metastable thin-film strontium tantalate perovskite," J. Amer. Ceram. Soc., vol. 82, no. 8, pp. 2101-2105, Aug. 1999.
-
(1999)
J. Amer. Ceram. Soc
, vol.82
, Issue.8
, pp. 2101-2105
-
-
Rodriguez, M.A.1
Boyle, T.J.2
Hernandez, B.A.3
Taland, D.R.4
Vanheusden, K.5
-
12
-
-
0000763589
-
Synthesis of new liquid mixed Sr-Ta and Sr-Nb alkoxides as CVD precursors for metal oxide thin films
-
H. Kadokura, Y. Okuhara, M. Mitsuya, and H. Funakubo, "Synthesis of new liquid mixed Sr-Ta and Sr-Nb alkoxides as CVD precursors for metal oxide thin films," Chem. Vap. Depos., vol. 6, no. 5, pp. 225-227, 2000.
-
(2000)
Chem. Vap. Depos
, vol.6
, Issue.5
, pp. 225-227
-
-
Kadokura, H.1
Okuhara, Y.2
Mitsuya, M.3
Funakubo, H.4
-
13
-
-
20044369893
-
AVD technology for deposition of next generation devices
-
May/Jun
-
U. Weber, M. Schumacher, J. Lindner, O. Boissiere, P. Lehnen, S. Miedl, G. Barbar, C. Lohe, and T. McEntee, "AVD technology for deposition of next generation devices," Microelectron. Reliab., vol. 45, no. 5/6, pp. 945-948, May/Jun. 2005.
-
(2005)
Microelectron. Reliab
, vol.45
, Issue.5-6
, pp. 945-948
-
-
Weber, U.1
Schumacher, M.2
Lindner, J.3
Boissiere, O.4
Lehnen, P.5
Miedl, S.6
Barbar, G.7
Lohe, C.8
McEntee, T.9
-
14
-
-
2342441961
-
7 crystals by MDSC, Brillouin and dielectric spectroscopy
-
Apr
-
7 crystals by MDSC, Brillouin and dielectric spectroscopy," J. Phys. D, Appl. Phys., vol. 37, no. 7, pp. 1127-1131, Apr. 2004.
-
(2004)
J. Phys. D, Appl. Phys
, vol.37
, Issue.7
, pp. 1127-1131
-
-
Hushur, A.1
Shabbir, G.2
Ko, J.-H.3
Kojima, S.4
-
15
-
-
0036677583
-
2
-
Jul
-
2," Chem. Mater., vol. 14, no. 7, pp. 3369-3376, Jul. 2002.
-
(2002)
Chem. Mater
, vol.14
, Issue.7
, pp. 3369-3376
-
-
Yoshino, M.1
Kakihana, M.2
Cho, W.S.3
Kato, H.4
Kudo, A.5
-
16
-
-
34249970696
-
Electrophysical characteristics of strontium tantalate
-
Jul
-
V. Y. Kunin, Y. Tarnopol'skii, and N. A. Shturbina, "Electrophysical characteristics of strontium tantalate," Russ. Phys. J., vol. 32, no. 2, pp. 556-559, Jul. 1989.
-
(1989)
Russ. Phys. J
, vol.32
, Issue.2
, pp. 556-559
-
-
Kunin, V.Y.1
Tarnopol'skii, Y.2
Shturbina, N.A.3
-
17
-
-
33646577495
-
Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors
-
May
-
C. Durand, C. Vallée, C. Dubourdieu, M. Kahn, M. Derivaz, S. Blonkowski, D. Jalabert, P. Hollinger, Q. Fang, and W. Boyd, "Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 24, no. 3, pp. 459-466, May 2006.
-
(2006)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.24
, Issue.3
, pp. 459-466
-
-
Durand, C.1
Vallée, C.2
Dubourdieu, C.3
Kahn, M.4
Derivaz, M.5
Blonkowski, S.6
Jalabert, D.7
Hollinger, P.8
Fang, Q.9
Boyd, W.10
-
18
-
-
33744807210
-
Metallorganic chemical vapor deposition of Sr-Ta-O and Bi-Ta-O films for backend integration of high-k capacitors
-
L. Goux, H. Vander Meeren, and D. J. Wouters, "Metallorganic chemical vapor deposition of Sr-Ta-O and Bi-Ta-O films for backend integration of high-k capacitors," J. Electrochem. Soc., vol. 153, no. 7, pp. F132-F136, 2006.
-
(2006)
J. Electrochem. Soc
, vol.153
, Issue.7
-
-
Goux, L.1
Vander Meeren, H.2
Wouters, D.J.3
-
19
-
-
0036923577
-
Proposed universal relationship between breakdown and dielectric constant
-
J. McPherson, J. Kim, A. Shanware, H. Mogul, and J. Rodriguez, "Proposed universal relationship between breakdown and dielectric constant," in IEDM Tech. Dig., 2002, pp. 633-636.
-
(2002)
IEDM Tech. Dig
, pp. 633-636
-
-
McPherson, J.1
Kim, J.2
Shanware, A.3
Mogul, H.4
Rodriguez, J.5
|