Low-frequency dielectric relaxation and ac conduction of SrBi 2Ta2O9 thin film grown by pulsed laser deposition

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 4006-4008

  Kim, Ill Won ^a   Ahn, Chang Won ^a   Kim, Jin Soo ^b   Song, Tae Kwon ^b   Bae, Jong Sung ^c   Choi, Byung Chun ^c   Jeong, Jung Hyun ^c   Lee, Jae Shin ^a  

^a University of Ulsan   (South Korea)

^b Changwon National University   (South Korea)

^c Pukyong National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTION; AC CONDUCTIVITY; APPLIED ELECTRIC FIELD; CONDUCTION PROCESS; ELECTRICAL CONDUCTION; FERROELECTRIC PROPERTY; FREQUENCY DEPENDENT; FREQUENCY RANGES; LOW FREQUENCY; P-E HYSTERESIS LOOPS; PULSED-LASER DEPOSITION TECHNIQUE; SBT THIN FILM; TEMPERATURE RANGE; THERMAL ACTIVATION ENERGIES; X-RAY DIFFRACTION STUDIES;

ACTIVATION ENERGY; DEPOSITION; DIELECTRIC MATERIALS; DIELECTRIC RELAXATION; ELECTRIC FIELDS; ELECTRIC PROPERTIES; PULSED LASER DEPOSITION; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

PULSED LASERS;

EID: 79956058750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1482138     Document Type: Article

References (21)

1. R. Dat, D. J. Lichtenwalner, O. Auciello, and A. I. Kingon, Appl. Phys. Lett. 64, 2673 (1994). apl APPLAB 0003-6951
2. H. N. Al-Shareef, A. I. Kingon, X. Chen, K. R. Bellur, and O. Auciello, J. Mater. Res. 9, 2968 (1994). jmr JMREEE 0884-2914
3. B. Aurivillius, Nature (London) 2, 519 (1950). nat NATUAS 0028-0836
4. T.-C. Chen, C.-L. Thio, and S. B. Desu, J. Mater. Res. 12, 2628 (1997). jmr JMREEE 0884-2914
5. R. Dat, J. K. Lee, O. Auciello, and A. I. Kingon, Appl. Phys. Lett. 67, 572 (1995). apl APPLAB 0003-6951
6. Y. Oishi, W. Wu, K. Fumoto, M. Okuyama, and Y. Hamaka, Jpn. J. Appl. Phys., Part 1 35, 1242 (1996). jjb JAPNDE 0021-4922
7. T. Atsuki, N. Soyama, T. Yonezawa, and K. Ogi, Jpn. J. Appl. Phys., Part 1 34, 5096 (1995). jjb JAPNDE 0021-4922
8. S. J. Lee, K. Y. Kang, and S. K. Han, Appl. Phys. Lett. 75, 1784 (1999). apl APPLAB 0003-6951
9. R. Liedtke, M. Grossmann, and R. Waser, Appl. Phys. Lett. 77, 2045 (2000). apl APPLAB 0003-6951
10. K. Watanabe, A. J. Hartmann, R. N. Lamb, and J. F. Scott, J. Appl. Phys. 84, 2170 (1998). jap JAPIAU 0021-8979
11. C. S. Hwang, B. T. Lee, C. S. Kang, J. W. Kim, K. H. Lee, H. J. Cho, H. Horii, W. D. Kim, S. I. Lee, Y. B. Roh, and M. Y. Lee, J. Appl. Phys. 83, 3703 (1998). jap JAPIAU 0021-8979
12. A. J. Hartmann, R. N. Lamb, J. F. Scott, J. Robertson, C. W. Chen, and P. J. Johnston, J. Korean Phys. Soc. 32, S1329 (1998). jkp KPSJAS 0374-4884
13. B. Nagaraj, S. Aggarwal, T. K. Song, T. Sawhney, and R. Ramesh, Phys. Rev. B 59, 16022 (1999). prb PRBMDO 0163-1829
14. R. Waser, T. Baiatu, and K. H. Hardlt, J. Am. Ceram. Soc. 73, 1645 (1990). jac JACTAW 0002-7820
15. W. L. Warren, K. Vanheusden, D. Dimos, G. E. Pike, and B. A. Tuttle, J. Am. Ceram. Soc. 79, 536 (1996). jac JACTAW 0002-7820
16. S. Bhattachaeyya, S. S. N. Bharadwaja, and S. B. Krupanidhi, J. Appl. Phys. 88, 4294 (2000). jap JAPIAU 0021-8979
17. N. J. Seong, C. H. Yang, W. C. Shin, and S. G. Yoon, Appl. Phys. Lett. 72, 1374 (1998). apl APPLAB 0003-6951
18. S. Saha and S. B. Krupanidhi, J. Appl. Phys. 87, 849 (2000). jap JAPIAU 0021-8979
19. S. Zafar, R. E. Jones, B. Jiang, B. White, P. Chu, D. Taylor, and S. Gillespie, Appl. Phys. Lett. 73, 175 (1998). apl APPLAB 0003-6951
20. A. R. James, S. Balaji, and S. B. Krupanidhi, Mater. Sci. Eng., B 64, 149 (1999). msb MSBTEK 0921-5107
21. M. J. Forbess, S. Seraji, Y. Wu, C. P. Nguyen, and G. Z. Cao, Appl. Phys. Lett. 76, 2934 (2000). apl APPLAB 0003-6951