Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages 619-625

  Huang, Jun Chin ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Huang, Dong Hai ^a   Huang, Ming Feng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; OSCILLATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

CARRIER TRANSPORT CHARACTERISTICS; GATE-VOLTAGE SWING (GVS); KINK EFFECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33645658566     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/009     Document Type: Article

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