InGaP/InGaAs pseudomorphic heterodoped-channel FETs with a field plate and a reduced gate length by splitting gate metal

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 948-950

  Chen, H R ^a   Hsu, M K ^b   Chiu, S Y ^b   Chen, W T ^b   Chen, G H ^b   Chang, Y C ^b   Lour, W S ^b  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

Device linearity; Field plate; High breakdown; InGaP InGaAs; Pseudomorphic

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

GATE LENGTH; GATE METAL; GATE-VOLTAGE SWING; HETERODOPED-CHANNEL FETS; PSEUDOMORPHIC FETS;

FIELD EFFECT TRANSISTORS;

EID: 33947212281     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886717     Document Type: Article

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