InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 864-866

  Lee, Kuan Wei ^a   Sze, Po Wen ^b   Lin, Yu Ju ^a   Yang, Nan Ying ^a   Houng, Mau Phon ^a   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

Author keywords

Gate dielectric; InGaP; Liquid phase; MOS; Pseudomorphic high electron mobility transistor (PHEMT)

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; POWER ELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

GATE DIELECTRIC; GATE SWING VOLTAGES; LIQUID-PHASE OXIDATION; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 29244475081     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859629     Document Type: Article

References (16)

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