A new model of gate capacitance as a simple tool to extract MOS parameters

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 935-945

  Larcher, Luca ^a,b   Pavan, Paolo ^a,b   Pellizzer, Fabio ^c   Ghidini, Gabriella ^c  

^a IEEE   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Capacitance measurements; Dielectric films; Electric fields; Simulations

Indexed keywords

DEGENERACY FACTOR; DEPLETION CHARGE; ELECTRON CHARGE; GATE CAPACITANCE; PLANCK'S CONSTANT;

BAND STRUCTURE; CAPACITANCE; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIELECTRIC FILMS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; ITERATIVE METHODS; POLYSILICON; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 0035340351     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918242     Document Type: Article

References (28)