Tunneling currents through ultra thin HfO2/Al2 O3/HfO2 triple layer gate dielectrics for advanced MIS devices

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 8-9, 2008, Pages 902-907

  Tyagi, Hitender Kumar ^a   George, P J ^a  

^a KURUKSHETRA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON TUNNELING; GATE DIELECTRICS; LEAKAGE CURRENTS; MICROELECTRONICS; PERMITTIVITY;

EQUIVALENT OXIDE THICKNESS; FOWLER-NORDHEIM TUNNELING CURRENTS; TUNNELING CURRENTS;

INTEGRATED CIRCUITS;

EID: 44149097383     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9679-0     Document Type: Conference Paper

References (18)

1. 1. G. Wilk R.M. Wallace J. Anthony 2001 J. Appl. Phys. 89 5243 10.1063/1.1361065 1:CAS:528:DC%2BD3MXjt1eisrw%3D G. Wilk, R.M. Wallace, J. Anthony, J. Appl. Phys. 89, 5243 (2001)
2. 2. K.F. Schuegraf C. Hu 1994 IEEE Trans. Electron Dev. 41 761 10.1109/16.285029 1:CAS:528:DyaK2cXms12ntbg%3D K.F. Schuegraf, C. Hu, IEEE Trans. Electron Dev. 41, 761 (1994)
3. 3. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 2003)
4. 4. R.M. Wallace G.D. Wilk 2003 Crit. Rev. Solid State Mater. Sci. 28 231 10.1080/714037708 1:CAS:528:DC%2BD2cXjt1ehsLo%3D R.M. Wallace, G.D. Wilk, Crit. Rev. Solid State Mater. Sci. 28 231 (2003)
5. 5. T. Hori, Gate Dielectrics and MOS ULSIs: Principles, Technologies, and Applications (Springer, Berlin, Germany, 1997)
6. 6. L. Manchanda M.D. Morris M.L. Green R.B. Dover van F. Klemens T.W. Sorsch P.J. Silverman G.D. Wilk B. Busch S. Aravamudhan 2001 Microelectron. Eng. 59 351 10.1016/S0167-9317(01)00668-2 1:CAS:528:DC%2BD3MXnslWlu7c%3D L. Manchanda, M.D. Morris, M.L. Green, R.B. van Dover, F. Klemens, T.W. Sorsch, P.J. Silverman, G.D. Wilk, B. Busch, S. Aravamudhan, Microelectron. Eng. 59, 351 (2001)
7. 7. R.M.C. Almeida de I.J.R. Baumvol 2003 Surf. Sci. Rep. 49 1 10.1016/S0167-5729(02)00113-9 R.M.C. de Almeida, I.J.R. Baumvol, Surf. Sci. Rep. 49, 1 (2003)
8. 8. H.C. Casey Jr. 1999 Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors John Wiley & Sons New York H.C. Casey Jr., Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors (John Wiley & Sons, New York, 1999)
9. 9. D. Frohman-Bentchkowsky M. Lenzlinger 1969 J. Appl. Phys. 40 3307 10.1063/1.1658181 1:CAS:528:DyaF1MXks1Giurs%3D D. Frohman-Bentchkowsky, M. Lenzlinger, J. Appl. Phys. 40, 3307 (1969)
10. 10. http://etd.caltech.edu/etd/available/etd05262004111123/unrestricted/Julie_Casperson_Thesis.pdf
11. 11. N.G. Tarr D.L. Pulfrey D.S. Camporese 1983 IEEE Trans. Electron Dev. 30 1780 10.1109/T-ED.1983.21442 N.G. Tarr, D.L. Pulfrey, D.S. Camporese, IEEE Trans. Electron Dev. 30, 1780 (1983)
12. 12. M. Daps B. Uermeire P.W. Merteus R.L. Meirnaeghe Van M.M. Hegus 1994 Solid-State Electron. 38 1465 M. Daps, B. Uermeire, P.W. Merteus, R.L. Van Meirnaeghe, M.M. Hegus, Solid-State Electron. 38, 1465 (1994)
13. 13. C. Chaneliere J.L. Autran 1999 J. Appl. Phys. 86 480 10.1063/1.370756 1:CAS:528:DyaK1MXjvV2rsrg%3D C. Chaneliere, J.L. Autran, J. Appl. Phys. 86, 480 (1999)
14. 14. K. Ingemar Lundstrom C.M. Svensson 1972 IEEE Trans. Electron Dev. 19 826 10.1109/T-ED.1972.17500 K. Ingemar Lundstrom, C.M. Svensson, IEEE Trans. Electron Dev. 19, 826 (1972)
15. 15. C. Svensson I. Lundstrom 1970 Electron. Lett. 6 645 10.1049/el:19700447 C. Svensson, I. Lundstrom, Electron. Lett. 6, 645 (1970)
16. 16. F. Stern 1972 Phys. Rev. 135 4891 F. Stern, Phys. Rev. 135, 4891 (1972)
17. 17. M. Le Roy E. Lheurette 2003 J. Appl. Phys. 93 2966 10.1063/1.1544650 1:CAS:528:DC%2BD3sXhvV2rsL8%3D M. Le Roy, E. Lheurette, J. Appl. Phys. 93, 2966 (2003)
18. 18. B. Govoreanu P. Blomme M. Rosmeulen J. Van Houdt K. De Meyer 2003 IEEE Electron Dev. Lett. 24 99 10.1109/LED.2002.807694 1:CAS:528:DC%2BD3sXktVSnsrc%3D B. Govoreanu, P. Blomme, M. Rosmeulen, J. Van Houdt, K. De Meyer, IEEE Electron Dev. Lett. 24, 99 (2003)