Interface effects on the characteristics of metal-ferroelectric-insulator- semiconductor field-effect transistor

Semiconductor Science and Technology

Volumn 26, Issue 9, 2011, Pages

  Sun, Jing ^a   Zheng, Xue Jun ^a   Cao, Juan ^b   Li, Wen ^a  

^a XIANGTAN UNIVERSITY   (China)

^b HUNAN INSTITUTE OF ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; IMPROVED MODELS; INTERFACE EFFECT; INTERFACE LAYER; MFIS STRUCTURE; MFIS-FET; MOBILITY MODEL; PERFORMANCE IMPROVEMENTS; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; TRANSISTOR CHARACTERISTICS; TWO LAYERS;

CAPACITANCE; DRAIN CURRENT; FERROELECTRICITY; MESFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON COMPOUNDS; TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 80051999868     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/9/095027     Document Type: Article

References (38)

1. Su Y D, Shih W C and Lee J Y 2007 Microelectron. Reliab. 47 619
2. Park B E, Takahashi K and Ishiwara H 2004 Appl. Phys. Lett. 85 4448
3. Aizawa K, Park B E, Kawashima Y, Takahashi K and Ishiwara H 2004 Appl. Phys. Lett. 85 3199
4. Takahashi K, Aizawa K, Park B E and Ishiwara H 2005 Japan. J. Appl. Phys. 44 6218
5. Song Y U, Park J S, Yoon J W, Lee G G, Park B E and Kim C J 2006 Integr. Ferroelectr. 84 203
6. Lin C M, Shih W, Chang I Y, Juan P C and Lee J Y 2009 Appl. Phys. Lett. 94 142905
7. Jeon H S, Lee G G, Kim J H, Kim J N, Choi Y S and Park B E 2008 Ferroelectrics 368 81
8. Miller S L and McWhorter P J 1992 J. Appl. Phys. 72 5999
9. Kamei T, Tokumitsu E and Ishiwara H 1998 IEICE Trans. Electron. E81-C 577
10. Lue H T, Wu C J and Tseng T Y 2002 IEEE Trans. Electron Devices 49 1790
11. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) chapter 7
12. Taur Y and Ning T H 1998 Fundamentals of Modern VLSI Devices (Cambridge: Cambridge University Press) chapter 3
13. Setter N, Damjanovic D, Eng L, Fox G, Gevorgian S and Hong S 2006 J. Appl. Phys. 100 051606
14. Alpay S P, Misirlioglu I B, Nagarajan V and Ramesh R 2004 Appl. Phys. Lett. 85 2044
15. Mokry P, Tagantsev A K and Setter N 2004 Phys. Rev. B 70 172107
16. Miller S L, Nasby R D, Schwank J R, Rodgers M S and Dressendorfer P V 1990 J. Appl. Phys. 68 6463
17. Sinnamon L J, Saad M M, Bowman R M and Gregg J M 2002 Appl. Phys. Lett. 81 703
18. Zhou C and Newns D M 1997 J. Appl. Phys. 82 3081
19. Stengel M, Vanderbilt D and Spaldin N A 2009 Nature Mater. 8 392
20. Chang L W, Alexe M, Scott J F and Gregg J M 2009 Adv. Mater. 21 4911
21. Cruz J P, Joanni E, Vilarinho P M and Kholkin A L 2010 J. Appl. Phys. 108 114106
22. Lou X J 2009 J. Appl. Phys. 105 094107
23. Lee H N, Kim Y T and Choh S H 2000 Appl. Phys. Lett. 76 1066
24. Lee S K, Kim Y T, Kim S and Lee C E 2002 J. Appl. Phys. 91 9303
25. Choi H S, Kim E H, Choi I H, Kim Y T, Choi J H and Lee J Y 2001 Thin Solid Films 388 226
26. Kim K T, Lee J M, Song S H and Kim C I 2005 Thin Solid Films 475 166
27. Niu G, Yin S, Saint-Girons G, Gautier B, Lecoeur P, Pillard V, Hollinger G and Vilquin B 2011 Microelectron. Eng. 38 1232
28. Tagantsev A K and Stolichnov I A 1999 Appl. Phys. Lett. 74 1326
29. Cillessen J F, Prins M W J and Wolf R M 1996 J. Appl. Phys. 81 2777
30. Pertsev N A, Contreras J R, Kukhar V G, Hermanns B, Kohlstedt H and Waser R 2003 Appl. Phys. Lett. 83 3356
31. Basceri C, Streiffer S K, Kingon A I and Waser R 1997 J. Appl. Phys. 82 2497
32. Streiffer S K, Basceri C, Parker C B, Lash S E and Kingon A 1999 J. Appl. Phys. 86 4565
33. Lou X J and Wang J 2010 J. Phys.:Condens. Matter 22 055901
34. Grossmann M, Lohse O, Bolten D, Boettger U and Schneller T 2002 J. Appl. Phys. 92 2680
35. Wong C K and Shin F G 2005 Appl. Phys. Lett. 86 042901
36. Ye Z, Tang M H, Zhou Y C, Zheng X J, Cheng C P and Hu Z S 2007 Appl. Phys. Lett. 90 042902
37. Takagi S, Toriumi A, Iwase M and Tango H 1994 IEEE Trans. Electron Devices 41 2357
38. Zhang J J, Sun J and Zheng X J 2009 Solid-State Electron. 53 170