Fabrication and characterization of MFIS-FET Using Au/BLT/LZO/Si structures

Ferroelectrics

Volumn 368, Issue 1 PART 2, 2008, Pages 81-89

  Jeon, Ho Seung ^a   Lee, Gwang Geun ^a   Kim, Jeong Hwan ^a   Kim, Joo Nam ^a   Choi, Yun Soo ^a   Park, Byung Eun ^a  

^a University of Seoul   (South Korea)

Author keywords

(Bi,La) 4 Ti3O12; Ferroelectric memory; LaZrOx; Metal ferroelectric insulator silicon

Indexed keywords

(BI,LA) 4 TI3O12; BLT FILMS; CHARACTERISTIC CURVE; DRAIN VOLTAGE; EQUIVALENT OXIDE THICKNESS; FERROELECTRIC MEMORY; FERROELECTRIC PROPERTY; GATE STRUCTURE; GATE VOLTAGES; HIGH DENSITY; MEMORY WINDOW; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; MFIS-FET; N-CHANNEL; SI(1 0 0); THRESHOLD VOLTAGE SHIFTS;

DRAIN CURRENT; FERROELECTRIC DEVICES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FILM THICKNESS; MESFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; THRESHOLD VOLTAGE; WINDOWS;

LANTHANUM;

EID: 75449101595     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190802367984     Document Type: Conference Paper

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