A model for the C-V characteristics of the metal-ferroelectric-insulator-semiconductor structure

Solid-State Electronics

Volumn 53, Issue 2, 2009, Pages 170-175

  Zhang, Jun Jie ^a   Sun, Jing ^a   Zheng, Xue Jun ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

C V characteristic; DST; Ferroelectric device; Memory window; MFIS structure

Indexed keywords

CIRCUIT SIMULATION; COMPUTER AIDED DESIGN; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; DISTRIBUTION FUNCTIONS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC SWITCHGEAR; FERROELECTRIC DEVICES; FERROELECTRICITY; FUNCTIONS; INFORMATION THEORY; MATHEMATICAL MODELS; MODEL STRUCTURES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SWITCHING THEORY; SYSTEM THEORY; WINDOWS;

C-V CHARACTERISTIC; CAPACITANCE VOLTAGES; DST; ELECTRONIC DESIGN AUTOMATIONS; FERROELECTRIC DIPOLES; FERROELECTRIC LAYERS; INSULATOR LAYERS; MATHEMATICAL DESCRIPTIONS; MEMORY WINDOW; MFIS STRUCTURE; SEMI-CONDUCTORS; SEMICONDUCTOR STRUCTURES; SILICON PHYSICS; SIMULATION RESULTS; THICKNESS EFFECTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 58349113650     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.10.012     Document Type: Article

References (17)

1. 3)-semiconductor devices. Microelectron Reliab 47 (2007) 619-622
2. 3)-semiconductor capacitors for nonvolatile memory applications. Appl Phys Lett 2006;88:072917-1-3.
3. Miller S.L., Schwank J.R., Nasby R.D., and Rodgers M.S. Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions. J Appl Phys 70 (1991) 2849-2860
4. Miller S.L., Nasby R.D., Schwank J.R., Rodgers M.S., and Dressendorfer P.V. Device modeling of ferroelectric capacitors. J Appl Phys 68 (1990) 6463-6471
5. Miller S.L., and McWhorter P.J. Physics of the ferroelectric nonvolatile memory field effect transistor. J Appl Phys 72 (1992) 5999-6010
6. Lue H.T., Wu C.J., and Tseng T.Y. Device modeling of ferroelectric memory field-effect transistor (FeMFET). IEEE Trans Electron Dev 49 (2002) 1790-1798
7. Yu J., Wang L.H., Wang Y.B., Peng G., Liu F., and Gao J.X. A compact model for the simulation of ferroelectric capacitor. Integr Ferroelectr 75 (2005) 35-45
8. 2 /Si ferroelectric gate oxide structure. Thin Solid Films 388 (2001) 226-230
9. Kim K.T., Lee J.M., Song S.H., and Kim C.I. Characterization of BLT thin films using MgO buffer layer for MFIS-FET. Thin Solid Films 475 (2005) 166-170
10. Sze S.M. Physics of semiconductor devices. 2nd ed. (1981), Wiley-Interscience Press, New York p. 362-79
11. Tagantsev A.K., and Stolichnov I.A. Injection-controlled size effect on switching of ferroelectric thin films. Appl Phys Lett 74 (1999) 1326-1328
12. Wang L, Yu J, Wang Y, Peng G, Liu F, Gao J. Modeling ferroelectric capacitors based on the dipole switching theory. J Appl Phys 2007;101:104505-1-7.
13. Schultz I., Goebel H., and Ullmann M. Modeling polarization of ferroelectric SBT capacitors including temperature dependence. Electron Lett 37 (2001) 1216-1217
14. Preisach F. Uber die magnatische nachwirkung. Z Phys 94 (1935) 277-302
15. Yang F, Tang MH, Zhou YC, Zheng JX, Liu F, Tang JX. A model for the polarization hysteresis loops of the perovskite-type ferroelectric thin films. Appl Phys Lett 2007;91:142902-1-3.
16. Lee S.K., Kim Y.T., Kim S.I., and Lee C.E. Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures. J Appl Phys 91 (2002) 9303-9307
17. Kanashima T., and Okuyama M. Analyses of high frequency capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structure. Jpn J Appl Phys 38 (1999) 2044-2048