The characterization of retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3, Y2O3)-semiconductor devices

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 619-622

  Su, Yu Di ^a   Shih, Wen Chieh ^a   Lee, Joseph Ya min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CONDUCTION BANDS; DATA STORAGE EQUIPMENT; FIELD EFFECT TRANSISTORS; LEAD COMPOUNDS; SEMICONDUCTOR DEVICES;

METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS); RETENTION PROPERTIES; SWEEP VOLTAGE;

FERROELECTRIC MATERIALS;

EID: 34247131753     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.048     Document Type: Article

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