A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Wong, C K ^a   Shin, F G ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRODES; FERROELECTRICITY; MATHEMATICAL MODELS; POLARIZATION;

ELECTRIC DISPLACEMENT; POLARIZATION GRADIENTS; VOLTAGE SHIFTS;

THIN FILMS;

EID: 13644282506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853520     Document Type: Article

References (23)

1. W. L. Warren, G. E. Pike, B. A. Tuttle, and D. Dimos, Appl. Phys. Lett. 70, 2010 (1997).
2. E. G. Lee, D. J. Wouters, G. Willems, and H. E. Maes, Appl. Phys. Lett. 69, 1223 (1996).
3. B. H. Park, T. W. Noh, J. Lee, C. Y. Kim, and W. Jo, Appl. Phys. Lett. 70, 1101 (1997).
4. S. Okamura, S. Miyata, Y. Mizutami, T. Nishida, and T. Shiosaki, Jpn. J. Appl. Phys., Part 1 38, 5364 (1999).
5. D. Nagasawa and H. Nozawa, Jpn. J. Appl. Phys., Part 1 38, 5406 (1999).
6. W. Liu, J. Ko, and W. Zhu, Mater. Lett. 49, 122 (2001).
7. Y. Xu, C. J. Chen, R. Xu, and J. D. Mackenzie, J. Appl. Phys. 67, 2985 (1990).
8. S. K. Dey, J. J. Lee, and P. Alluri, Jpn. J. Appl. Phys., Part 1 34, 3142 (1995).
9. J. J. Lee and S. B. Desu, Ferroelectr., Lett. Sect. 20, 27 (1995).
10. U. Robels, J. H. Calderwood, and G. Arlt, J. Appl. Phys. 77, 4002 (1995).
11. K. Abe, N. Yanase, T. Yasumoto, and T. Kawakubo, Jpn. J. Appl. Phys., Part 1 41, 6065 (2002).
12. T. Lü and W. Cao, Microelectron. Eng. 66, 818 (2003).
13. L. Baudry, J. Appl. Phys. 86, 1096 (1999).
14. K. W. Lee, Y. I. Kim, and W. J. Lee, Ferroelectrics 271, 1769 (2002).
15. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. 92, 2680 (2002).
16. Y. Watanabe and A. Masuda, Ferroelectrics 217, 53 (1998).
17. H. K. Chan, C. H. Lam, and F. G. Shin, J. Appl. Phys. 95, 2665 (2004).
18. C. Zhou and D. M. Newns, J. Appl. Phys. 82, 3081 (1997).
19. S. L. Miller, J. R. Schwank, R. D. Nasby, and M. S. Rodgers, J. Appl. Phys. 70, 2849 (1991).
20. L. Zheng, C. Lin, W.-P. Xu, and M. Okuyama, J. Appl. Phys. 79, 8634 (1996).
21. R. Bouregba, G. Poullain, B. Vilquin, and G. Le Rhun, J. Appl. Phys. 93, 5583 (2003).
22. I. Kanno, S. Fhjii, T. Kamada, and R. Takayama, Appl. Phys. Lett. 70, 1378 (1997).
23. R. Bouregba, G. Poullain, B. Vilquin, and H. Murray, Ferroelectrics 256, 47 (2001).