Numerical analysis of metal-ferroelectricsemiconductor field-effect-transistors (MFS-FETs) considering inhomogeneous ferroelectric polarization

IEICE Transactions on Electronics

Volumn E81-C, Issue 4, 1998, Pages 577-582

  Kamei, Tatsuya ^a   Tokumitsu, Eisuke ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric; Memory; MFSFET; Si non volatile memory; SrBi2Ta2O9

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MATHEMATICAL MODELS; NONVOLATILE STORAGE; NUMERICAL ANALYSIS; POLARIZATION; STRONTIUM COMPOUNDS;

FERROELECTRIC GATE INSULATORS; FERROELECTRIC POLARIZATION; METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFS FET);

FERROELECTRIC DEVICES;

EID: 0032051274     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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