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Volumn 81, Issue 6, 1997, Pages 2777-2783

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; MATHEMATICAL MODELS; MICROSTRUCTURE; PULSED LASER APPLICATIONS; SWITCHING; THIN FILM DEVICES;

EID: 0031102101     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363961     Document Type: Article
Times cited : (165)

References (38)
  • 10
    • 0016091777 scopus 로고
    • Charge injection in ferroelectric thin films has already clearly been identified in field-effect transistors with a ferroeletric gate insulator, see, for example, S.-Y. Wu, IEEE Trans. Electron Devices 21, 499 (1974), or C. H. Seager, D. McIntyre, B. A. Tuttle, and J. Evans, Integr. Ferroelectr. 6, 47 (1995).
    • (1974) IEEE Trans. Electron Devices , vol.21 , pp. 499
    • Wu, S.-Y.1
  • 11
    • 0005021690 scopus 로고
    • Charge injection in ferroelectric thin films has already clearly been identified in field-effect transistors with a ferroeletric gate insulator, see, for example, S.-Y. Wu, IEEE Trans. Electron Devices 21, 499 (1974), or C. H. Seager, D. McIntyre, B. A. Tuttle, and J. Evans, Integr. Ferroelectr. 6, 47 (1995).
    • (1995) Integr. Ferroelectr. , vol.6 , pp. 47
    • Seager, C.H.1    McIntyre, D.2    Tuttle, B.A.3    Evans, J.4
  • 12
    • 85033183200 scopus 로고    scopus 로고
    • note
    • r, ranges between 800 and 1000.
  • 13
    • 0004184936 scopus 로고    scopus 로고
    • 16a, Ferro-electrics and related substances, subvolume on oxides, Ikeda
    • Landolt Börnstein, 16a, Ferro-electrics and related substances, subvolume on oxides, pp. 119-125 (Ikeda).
    • Landolt Börnstein , pp. 119-125
  • 14
    • 85033182783 scopus 로고    scopus 로고
    • note
    • 3, filenr. 36-1394.
  • 18
    • 0000713087 scopus 로고    scopus 로고
    • 3
    • 3, p. 521; H. B. Krause and D. L. Gibbon, Z. Krist, 134, 44 (1971);
    • Landolt Börnstein III , pp. 521
  • 25
    • 36449003911 scopus 로고
    • The presence of a layer with low polarizability is demonstrated by small-signal high-frequency capacitance measurements of ferroelectric thin-film capacitors: J. J. Lee, C. L. Thio, and S. B. Desu, J. Appl. Phys. 78, 5073 (1995).
    • (1995) J. Appl. Phys. , vol.78 , pp. 5073
    • Lee, J.J.1    Thio, C.L.2    Desu, S.B.3
  • 26
    • 85033181993 scopus 로고    scopus 로고
    • note
    • The addition of a nonideal near-electrode layer (2) does not modify the conclusions of this section.
  • 27
    • 85033159004 scopus 로고    scopus 로고
    • note
    • In practice the switching potential of a thin film is not a constant, but weakly depends on the maximum field experienced in a given hysteresis loop. For clarity this effect is neglected in the present analysis.
  • 33
    • 85033178008 scopus 로고    scopus 로고
    • note
    • -6 mbar roughly corresponds to a monolayer occupation per second, which will do for the deposition rates of 0.1-0.3 nm/s used here.
  • 34
    • 85033185904 scopus 로고    scopus 로고
    • note
    • Analyses of the Zr and Ti content of our films were carried out by Rutherford backscattering spectroscopy (RBS) and XRF. Zr/Ti ratios were similar to the target composition for all ambients.
  • 35
    • 85033166931 scopus 로고    scopus 로고
    • note
    • This specific target composition is derived from preliminary experiments which roughly indicated the excess PbO corresponding with a substrate temperature necessary for epitaxial growth.
  • 36
    • 85033178500 scopus 로고    scopus 로고
    • note
    • The sticking probability of ablated species on room temperature substrates is unity.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.