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Charge injection in ferroelectric thin films has already clearly been identified in field-effect transistors with a ferroeletric gate insulator, see, for example, S.-Y. Wu, IEEE Trans. Electron Devices 21, 499 (1974), or C. H. Seager, D. McIntyre, B. A. Tuttle, and J. Evans, Integr. Ferroelectr. 6, 47 (1995).
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Charge injection in ferroelectric thin films has already clearly been identified in field-effect transistors with a ferroeletric gate insulator, see, for example, S.-Y. Wu, IEEE Trans. Electron Devices 21, 499 (1974), or C. H. Seager, D. McIntyre, B. A. Tuttle, and J. Evans, Integr. Ferroelectr. 6, 47 (1995).
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85033183200
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note
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r, ranges between 800 and 1000.
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13
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0004184936
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16a, Ferro-electrics and related substances, subvolume on oxides, Ikeda
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Landolt Börnstein
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14
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85033182783
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note
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3, filenr. 36-1394.
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3
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3, p. 521; H. B. Krause and D. L. Gibbon, Z. Krist, 134, 44 (1971);
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Landolt Börnstein III
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36449003911
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26
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85033181993
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-
note
-
The addition of a nonideal near-electrode layer (2) does not modify the conclusions of this section.
-
-
-
-
27
-
-
85033159004
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-
note
-
In practice the switching potential of a thin film is not a constant, but weakly depends on the maximum field experienced in a given hysteresis loop. For clarity this effect is neglected in the present analysis.
-
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30
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0001156603
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33
-
-
85033178008
-
-
note
-
-6 mbar roughly corresponds to a monolayer occupation per second, which will do for the deposition rates of 0.1-0.3 nm/s used here.
-
-
-
-
34
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85033185904
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note
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Analyses of the Zr and Ti content of our films were carried out by Rutherford backscattering spectroscopy (RBS) and XRF. Zr/Ti ratios were similar to the target composition for all ambients.
-
-
-
-
35
-
-
85033166931
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-
note
-
This specific target composition is derived from preliminary experiments which roughly indicated the excess PbO corresponding with a substrate temperature necessary for epitaxial growth.
-
-
-
-
36
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-
85033178500
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-
note
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The sticking probability of ablated species on room temperature substrates is unity.
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