On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 4, 2011, Pages

  Bruce, R L ^a,d   Weilnboeck, F ^a   Lin, T ^a   Phaneuf, R J ^a   Oehrlein, G S ^a   Long, B K ^b   Willson, C G ^b   Alizadeh, A ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c GE GLOBAL RESEARCH   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DRY ETCHING; ELECTRIC DISCHARGES; IONS; NITROGEN; NITROGEN PLASMA; PHOTOELECTRON SPECTROSCOPY; PLASMA ETCHING; POLYMERS; POLYSTYRENES; ROUGHNESS MEASUREMENT; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

DRY ETCH PROCESS; GAS DISCHARGE; IN-SITU ELLIPSOMETRY; LINE EDGE ROUGHNESS; NITROGEN ADDITIONS; PATTERNED STRUCTURE; PLASMA EXPOSURE; PLASMA-INDUCED; POLY(4-VINYLPYRIDINE) (P4VP); POST-PLASMA; SMOOTH SURFACE; SURFACE-ROUGHENING; UNDERLAYERS; VINYLPYRIDINE;

SURFACE ROUGHNESS;

EID: 80051885172     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3607604     Document Type: Article

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