Study of C 4F 8/CO and C 4F 8/Ar/ CO plasmas for highly selective etching of organosilicate glass over Si 3N 4 and SiC

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 2, 2004, Pages 236-244

  Ling, Li ^a   Hua, X ^a   Li, X ^a   Oehrlein, G S ^a   Celii, F G ^b   Kirmse, K H R ^b   Jiang, P ^b   Wang, Yicheng ^c   Anderson, H M ^d  

^a UNIVERSITY OF MARYLAND   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS MIXTURES; ORGANOSILICATE GLASSES (OSG);

DEPOSITION; DISSOCIATION; ELECTRON ENERGY LEVELS; FLUOROCARBONS; GLASS; IONIZATION; MASKS; PERMITTIVITY; PHOTORESISTS; PRESSURE EFFECTS; SILICATES; SILICON CARBIDE; SURFACE CHEMISTRY; THERMODYNAMIC STABILITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA ETCHING;

EID: 1842608773     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1638780     Document Type: Article

References (19)

1. S. Seta, M. Sekine, H. Hayashi, and Y. Yoshida, Jpn. J. Appl. Phys., Part 1 40, 2501 (2001).
2. H. Doh, C. Chu, K. Chi, and J. Moon, Jpn. J. Appl. Phys., Part 1 40, 6109 (2001).
3. H. Hayashi and M. Sekine, Jpn. J. Appl. Phys., Part 1 38, 4910 (1999).
4. H. Hayashi, K. Kurihara, and M. Sekine, Jpn. J. Appl. Phys., Part 1 35, 2488 (1996).
5. N. Omori, H. Matsuo, S. Watanabe, and M. Puschmann, Surf. Sci. 352, 988 (1996).
6. Y. Hakosaka, M. Nakamura, and H. Sugai, Jpn. J. Appl. Phys., Part 1 33, 2157 (1994).
7. T. Akimoto, S. Furuoya, K. Harasima, and E. Ikawa, Jpn. J. Appl. Phys., Part 1 33, 2151 (1994).
8. X. Hua, X. Wang, D. Fuentevilla, G. S. Oehrlein, F. G. Celii, and K. H. R. Kirmse, J. Vac. Sci. Technol. A 21, 1708 (2003).
9. Y. Wang and J. K. Olthoff, J. Appl. Phys. 85, 6358 (1999).
10. Y. Wang, R. J. Van Brunt, and J. K. Olthoff, J. Appl. Phys. 83, 703 (1998).
11. M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A 17, 26 (1999).
12. X. Li, L. Ling, X. Hua, M. Fukusawa, and G. S. Oehrlein, J. Vac. Sci. Technol. A 21, 284 (2003).
13. X. Li, X. Hua, L. Ling, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A 20, 2052 (2002).
14. M. Matsui, F. Uchida, M. Kojima, T. Tokunaga, F. Yano, and M. Hasegawa, J. Vae. Sci. Technol. A 20, 117 (2002).
15. T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A 16, 239 (1998).
16. CRC Handbook of Chemistry and Physics, 82nd ed. (Chemical Rubber Corp., Cleveland, OH, 2001-2002).
17. G. I. Font, W. L. Morgan, and G. Mennenga, J. Appl. Phys. 91, 3530 (2002).
18. W. Liu and G. A. Victor, Astrophys. J. 435, 909 (1994).
19. V. A. Godyak, R. B. Piejak, and B. M. Alexandrovich, Plasma Sources Sci. Technol. 11, 397 (2002).