Characterization of a silicon-related defect detected by its excited triplet state in electron-irradiated 3C-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 7, 2011, Pages

  Lefèvre, Jérémie ^a   Costantini, Jean Marc ^b   Gourier, Didier ^c   Esnouf, Stéphane ^a,d   Petite, Guillaume ^a  

^a LABORATOIRE DES SOLIDES IRRADIÉS   (France)

^b SRMA   (France)

^c PSL RESEARCH UNIVERSITY   (France)

^d DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961080822     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.075201     Document Type: Article

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