EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 23, 2004, Pages 1-6

  Umeda, T ^a   Isoya, J ^a   Morishita, N ^b   Ohshima, T ^b   Kamiya, T ^b   Gali, A ^c   Deak P ^c   Son, N T ^d   Janzen E ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON; SILICON CARBIDE;

AB INITIO CALCULATION; ARTICLE; ATOM; CONFORMATIONAL TRANSITION; DISTORTION PRODUCT OTOACOUSTIC EMISSION; ELECTRON SPIN RESONANCE; ELECTRONICS; ENERGY; IRRADIATION; MOLECULAR DYNAMICS; STRUCTURE ANALYSIS; SURFACE CHARGE; TEMPERATURE DEPENDENCE; THEORETICAL MODEL; THERMODYNAMICS;

EID: 14044266206     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235212     Document Type: Article

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