Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S = 3/2 and C3v symmetry in n-type 4H-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 23, 2002, Pages 2352021-23520212

  Mizuochi, N ^a   Yamasaki, S ^b   Takizawa, H ^c   Morishita, N ^c   Ohshima, T ^c   Itoh, H ^c   Isoya, J ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; CRYSTAL STRUCTURE; ELECTRIC FIELD; ELECTRON SPIN RESONANCE; ELECTRON TRANSPORT; ILLUMINATION; MEASUREMENT; MOLECULAR INTERACTION; POLARIZATION; PROTON TRANSPORT; WAVEFORM;

EID: 0037116081     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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