Divacancy in 4H-SiC

Physical Review Letters

Volumn 96, Issue 5, 2006, Pages

  Son, N T ^a,b,c,d,e,f   Carlsson, P ^a,b,c,d,e,f   Ul Hassan, J ^a,b,c,d,e,f   Janzen E ^a,b,c,d,e,f   Umeda, T ^b,c,d,e,f   Isoya, J ^b,c,d,e,f   Gali, A ^c,d,e,f   Bockstedte, M ^d,e,f   Morishita, N ^e,f   Ohshima, T ^e,f   Itoh, H ^e,f  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^e UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^f JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRONIC DENSITY OF STATES; GROUND STATE; PARAMAGNETIC RESONANCE;

NEUTRAL DIVACANCY; PHOTOEXCITATION; SPIN DENSITY;

SILICON CARBIDE;

EID: 33244478553     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.055501     Document Type: Article

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